S29GL256P10TFI013

Basic Information Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Large storage capacity
  • Low power consumption
• Package: TFBGA (Thin Fine-Pitch Ball Grid Array)
• Essence: Reliable and efficient data storage solution
• Packaging/Quantity: Available in reels, quantity varies based on customer requirements

Specifications

• Manufacturer: Cypress Semiconductor
• Memory Type: NOR Flash
• Density: 256 Megabits (32 Megabytes)
• Organization: 16-bit wide data bus
• Access Time: 100 nanoseconds
• Supply Voltage: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Endurance: 100,000 program/erase cycles
• Data Retention: 20 years

Detailed Pin Configuration

The S29GL256P10TFI013 has a total of 56 pins. The pin configuration is as follows:

1. VCCQ
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. DQ8
27. DQ9
28. DQ10
29. DQ11
30. DQ12
31. DQ13
32. DQ14
33. DQ15
34. WE#
35. CE#
36. RE#
37. BYTE#
38. ALE#
39. CLE#
40. WP#
41. RY/BY#
42. VSSQ
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC
49. NC
50. NC
51. NC
52. NC
53. NC
54. NC
55. NC
56. VCC

Functional Features

• High-speed read and write operations enable fast data access.
• Non-volatile memory ensures data retention even when power is removed.
• Large storage capacity allows for storing a significant amount of data.
• Low power consumption makes it suitable for battery-powered devices.
• Reliable performance with 100,000 program/erase cycles.
• Wide operating temperature range enables usage in various environments.

Advantages and Disadvantages

Advantages

• Fast read and write operations enhance overall system performance.
• Non-volatile nature ensures data integrity during power interruptions.
• Large storage capacity accommodates extensive data requirements.
• Low power consumption prolongs battery life in portable devices.
• Reliable endurance supports long-term usage.

Disadvantages

• Limited compatibility with certain legacy systems due to the 16-bit data bus.
• Higher cost compared to some alternative memory technologies.
• Limited availability of alternative models from other manufacturers.

Working Principles

The S29GL256P10TFI013 utilizes NOR flash memory technology. It stores data by trapping electrons in a floating gate within each memory cell. When reading data, the memory controller applies appropriate voltages to the memory cells, allowing the trapped charge to be sensed as a logic level. During programming or erasing, higher voltages are applied to modify the charge level in the floating gate, altering the logic state of the cell.

Detailed Application Field Plans

The S29GL256P10TFI013 is widely used in various electronic devices that require reliable and high-capacity data storage. Some common application fields include: - Embedded systems - Automotive electronics - Industrial control systems - Consumer electronics - Networking equipment

Detailed and Complete Alternative Models

While the S29GL256P10TFI013 is a popular choice for flash memory, there are alternative models available from other manufacturers. Some notable alternatives include: - Micron MT28EW256ABA1LPC - Samsung K9F2G08U0M-PCB0 - Toshiba TC58NVG2S0FTA00

These alternative models offer similar specifications and functionality, providing customers with options based on their specific requirements.

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