S29GL128P11FFIS30

Product Overview

Category

S29GL128P11FFIS30 belongs to the category of Flash Memory.

Use

It is primarily used for data storage in various electronic devices, such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• Non-volatile memory: Retains data even when power is turned off.
• High storage capacity: The S29GL128P11FFIS30 has a storage capacity of 128 gigabits (16 gigabytes).
• Fast read and write speeds: Allows for quick access and transfer of data.
• Reliable performance: Offers high endurance and data retention capabilities.
• Low power consumption: Optimized for energy efficiency.
• Wide operating temperature range: Can function in extreme temperature conditions.
• RoHS compliant: Meets environmental standards.

Package

The S29GL128P11FFIS30 is available in a compact and industry-standard package, such as a small outline integrated circuit (SOIC) or ball grid array (BGA).

Essence

The essence of S29GL128P11FFIS30 lies in its ability to provide reliable and high-capacity storage for electronic devices, ensuring efficient data management and retrieval.

Packaging/Quantity

The product is typically packaged in reels or trays, depending on the manufacturer's specifications. The quantity per package varies but is commonly around 100 units.

Specifications

• Memory Type: NAND Flash
• Organization: 128Gbit (16GB)
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: SOIC, BGA
• Data Retention: Up to 20 years
• Endurance: Up to 100,000 program/erase cycles
• Page Size: 2KB
• Block Size: 128KB

Detailed Pin Configuration

The S29GL128P11FFIS30 has a pin configuration as follows:

1. VCC (Power Supply)
2. A0-A18 (Address Inputs)
3. DQ0-DQ15 (Data Inputs/Outputs)
4. WE# (Write Enable)
5. CE# (Chip Enable)
6. RE# (Read Enable)
7. RY/BY# (Ready/Busy Output)
8. OE# (Output Enable)
9. WP#/ACC (Write Protect/Acceleration)
10. RESET# (Reset)

Functional Features

• High-speed read and write operations
• Built-in error correction code (ECC) for data integrity
• Sector erase and block erase capabilities
• Software and hardware protection mechanisms
• Automatic program and erase algorithms
• Power-saving features, such as deep power-down mode
• Advanced wear-leveling algorithms for enhanced endurance

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data access and transfer speeds
• Reliable performance and data retention
• Low power consumption
• Wide operating temperature range
• RoHS compliant

Disadvantages

• Relatively higher cost compared to other memory options
• Limited write endurance compared to some alternative technologies

Working Principles

The S29GL128P11FFIS30 utilizes NAND flash memory technology. It stores data in memory cells organized in a grid-like structure. Each cell can store multiple bits of information using different voltage levels. The memory cells are accessed through an address bus, and data is read or written using control signals. The device employs various algorithms and mechanisms to ensure data integrity, endurance, and efficient operation.

Detailed Application Field Plans

The S29GL128P11FFIS30 finds applications in a wide range of electronic devices, including: - Smartphones and tablets - Digital cameras and camcorders - Solid-state drives (SSDs) - Industrial control systems - Automotive electronics - Medical devices

Detailed and Complete Alternative Models

1. S29GL064P11FFIS20: 64Gbit (8GB) NAND Flash Memory, Parallel Interface.
2. S34ML08G2: 8Gbit (1GB) NAND Flash Memory, Serial Interface.
3. MT29F256G08CJAAA: 256Gbit (32GB) NAND Flash Memory, Parallel Interface.

These alternative models offer different storage capacities, interfaces, and features to cater to diverse application requirements.

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