Cypress Semiconductor Corp
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S29GL064N90DFI020
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S29GL064N90DFI020

Product Overview

  • Category: Flash Memory
  • Use: Data storage and retrieval in electronic devices
  • Characteristics: High capacity, fast read/write speeds, non-volatile memory
  • Package: Integrated Circuit (IC)
  • Essence: Non-volatile memory for reliable data storage
  • Packaging/Quantity: Available in various packaging options, typically sold in bulk quantities

Specifications

  • Model: S29GL064N90DFI020
  • Memory Capacity: 64 gigabits (8 gigabytes)
  • Voltage: 2.7V - 3.6V
  • Interface: Parallel
  • Access Time: 90 nanoseconds
  • Operating Temperature: -40°C to +85°C
  • Endurance: Up to 100,000 program/erase cycles
  • Data Retention: Up to 20 years

Pin Configuration

The S29GL064N90DFI020 has a total of 48 pins arranged as follows:

  1. VCC
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. A16
  19. A17
  20. A18
  21. A19
  22. A20
  23. A21
  24. A22
  25. A23
  26. A24
  27. A25
  28. A26
  29. A27
  30. A28
  31. A29
  32. A30
  33. A31
  34. DQ0
  35. DQ1
  36. DQ2
  37. DQ3
  38. DQ4
  39. DQ5
  40. DQ6
  41. DQ7
  42. WE#
  43. CE#
  44. OE#
  45. RY/BY#
  46. RESET#
  47. NC
  48. VSS

Functional Features

  • High-speed data transfer with fast access times
  • Reliable and durable non-volatile memory
  • Low power consumption
  • Built-in error correction mechanisms for data integrity
  • Easy integration into various electronic devices

Advantages

  • Large storage capacity allows for extensive data storage
  • Fast read/write speeds enhance overall device performance
  • Non-volatile memory ensures data retention even during power loss
  • Wide operating temperature range enables usage in various environments

Disadvantages

  • Higher cost compared to other types of memory
  • Limited endurance with a finite number of program/erase cycles
  • Requires additional circuitry for proper interfacing

Working Principles

The S29GL064N90DFI020 is based on the NAND flash memory technology. It stores data by trapping electrons in floating gate transistors, which can be electrically programmed and erased. The memory cells are organized in a grid-like structure, allowing for efficient storage and retrieval of data.

Application Field Plans

The S29GL064N90DFI020 is widely used in various electronic devices that require reliable and high-capacity data storage. Some common application fields include:

  1. Solid-state drives (SSDs)
  2. Embedded systems
  3. Automotive electronics
  4. Industrial control systems
  5. Consumer electronics

Alternative Models

  • S29GL032N90TFI030
  • S29GL128N10FFI010
  • S29GL256N11FAI020
  • S29GL512N11FFI020

These alternative models offer similar functionality and characteristics to the S29GL064N90DFI020, but with varying capacities and specifications.

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Liệt kê 10 câu hỏi và câu trả lời thường gặp liên quan đến ứng dụng S29GL064N90DFI020 trong giải pháp kỹ thuật

Sure! Here are 10 common questions and answers related to the application of S29GL064N90DFI020 in technical solutions:

  1. Q: What is the S29GL064N90DFI020? A: The S29GL064N90DFI020 is a flash memory device manufactured by Cypress Semiconductor. It has a capacity of 64 megabits (8 megabytes) and operates at a voltage of 3.0 to 3.6 volts.

  2. Q: What are the typical applications of S29GL064N90DFI020? A: The S29GL064N90DFI020 is commonly used in various embedded systems, such as automotive electronics, industrial control systems, consumer electronics, and networking equipment.

  3. Q: What is the interface of S29GL064N90DFI020? A: The S29GL064N90DFI020 uses a parallel NOR Flash interface with an 8-bit or 16-bit data bus, making it compatible with a wide range of microcontrollers and processors.

  4. Q: What is the operating temperature range of S29GL064N90DFI020? A: The S29GL064N90DFI020 can operate within a temperature range of -40°C to +85°C, making it suitable for both commercial and industrial applications.

  5. Q: Does S29GL064N90DFI020 support hardware and software write protection? A: Yes, the S29GL064N90DFI020 supports both hardware and software write protection mechanisms, allowing you to protect the stored data from accidental modifications.

  6. Q: What is the erase time of S29GL064N90DFI020? A: The S29GL064N90DFI020 typically requires around 2 milliseconds for a sector erase and around 30 milliseconds for a chip erase operation.

  7. Q: Can S29GL064N90DFI020 be used for code execution? A: Yes, the S29GL064N90DFI020 can be used for executing code directly from the flash memory, making it suitable for storing firmware or boot code in embedded systems.

  8. Q: Does S29GL064N90DFI020 support random access read operations? A: Yes, the S29GL064N90DFI020 supports random access read operations, allowing you to access any location within the memory without the need for sequential reads.

  9. Q: What is the power supply voltage requirement for S29GL064N90DFI020? A: The S29GL064N90DFI020 requires a power supply voltage of 3.0 to 3.6 volts for normal operation.

  10. Q: Is S29GL064N90DFI020 backward compatible with older flash memory devices? A: Yes, the S29GL064N90DFI020 is designed to be backward compatible with previous generations of Cypress flash memory devices, ensuring easy integration into existing systems.

Please note that these answers are general and may vary depending on specific implementation details and requirements.