S29GL032N11TFIV10

Basic Information Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Large storage capacity
• Package: Integrated Circuit (IC)
• Essence: Provides reliable and efficient data storage solution for various electronic devices
• Packaging/Quantity: Typically sold in reels or trays containing multiple units

Specifications

• Memory Capacity: 32 gigabits (4 gigabytes)
• Organization: 4,194,304 words x 8 bits
• Supply Voltage: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Access Time:
  • Random Read: 90 ns (maximum)
  • Page Program: 200 µs (typical)
  • Block Erase: 2 ms (typical)
• Erase Suspend/Resume: Support
• Write Suspend/Resume: Support
• Data Retention: 20 years (minimum)

Detailed Pin Configuration

The S29GL032N11TFIV10 has a total of 48 pins. The pin configuration is as follows:

1. VCCQ
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. WE#
43. CE#
44. RE#
45. WP#
46. RY/BY#
47. VSSQ
48. VCC

Functional Features

• High-speed read and write operations enable quick data access
• Support for erase suspend/resume and write suspend/resume functions enhances flexibility in data management
• Reliable data retention ensures long-term storage without loss or corruption
• Compatibility with various electronic devices due to its parallel interface

Advantages

• Large storage capacity allows for storing a significant amount of data
• High-speed operations facilitate efficient data transfer and retrieval
• Support for suspend/resume functions enables flexible data management
• Long data retention period ensures the integrity of stored information

Disadvantages

• Parallel interface may limit compatibility with newer devices that primarily use serial interfaces
• Higher power consumption compared to some other flash memory technologies

Working Principles

The S29GL032N11TFIV10 is based on NAND flash memory technology. It utilizes a grid of memory cells, where each cell stores multiple bits of data. The memory cells are organized into pages and blocks, allowing for efficient read, write, and erase operations. When data is written, it is programmed into the memory cells using electrical charges. Reading data involves detecting the charge levels in the cells. Erasing data involves removing the charges from the cells, making them ready for new data storage.

Detailed Application Field Plans

The S29GL032N11TFIV10 is widely used in various electronic devices that require reliable and high-capacity data storage. Some common application fields include: - Solid-state drives (SSDs) - Digital cameras - Set-top boxes - Networking equipment - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

1. S29GL064N11TFIV20: 64 gigabit (8 gigabyte) flash memory with similar specifications and features.
2. S29GL016D90TFI010: 16 gigabit (2 gigabyte) flash memory with different organization and access times but compatible interface.

(Note: This list is not exhaustive and there may be other alternative models available in the market.)

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