CY7C1614KV18-250BZI

Product Overview

Category

The CY7C1614KV18-250BZI belongs to the category of high-performance synchronous SRAM (Static Random Access Memory) chips.

Use

This product is primarily used in applications that require fast and reliable data storage and retrieval. It is commonly employed in various electronic devices such as computers, servers, networking equipment, and telecommunications systems.

Characteristics

• High Performance: The CY7C1614KV18-250BZI offers fast access times and high bandwidth, making it suitable for demanding applications.
• Large Capacity: With a capacity of 16 megabits (2 megabytes), this chip provides ample storage space for data-intensive tasks.
• Low Power Consumption: Despite its high performance, the CY7C1614KV18-250BZI is designed to operate efficiently, minimizing power consumption.
• Wide Operating Voltage Range: This chip can function reliably within a voltage range of 1.7V to 2.0V, ensuring compatibility with various systems.
• RoHS Compliant: The product adheres to the Restriction of Hazardous Substances directive, making it environmentally friendly.

Package and Quantity

The CY7C1614KV18-250BZI is available in a compact BGA (Ball Grid Array) package. Each package contains a single chip.

Specifications

• Organization: 2M x 8 bits
• Access Time: 18 ns
• Operating Voltage: 1.7V - 2.0V
• Operating Temperature Range: -40°C to +85°C
• Package Type: 165-ball BGA

Pin Configuration

The CY7C1614KV18-250BZI features a total of 165 pins. The pin configuration is as follows:

(Pin diagram goes here)

Functional Features

• Asynchronous and Synchronous Operation: The chip supports both asynchronous and synchronous modes, providing flexibility in different system configurations.
• Burst Mode: It offers burst read and write operations, enabling efficient data transfer between the memory and the processor.
• Automatic Power Down: The CY7C1614KV18-250BZI includes a power-down feature that reduces power consumption when the chip is not in use.
• Write Protection: This product incorporates write protection mechanisms to prevent accidental modification of stored data.

Advantages and Disadvantages

Advantages

• High performance and fast access times
• Large storage capacity
• Low power consumption
• Wide operating voltage range
• RoHS compliant

Disadvantages

• Relatively higher cost compared to other types of memory chips
• Limited availability in certain markets

Working Principles

The CY7C1614KV18-250BZI operates based on the principles of static random access memory. It stores data using flip-flops, which retain information as long as power is supplied. The chip utilizes address lines to select specific memory locations and data lines for reading from or writing to those locations. The control signals determine the type of operation (read or write) and the timing of data transfers.

Application Field Plans

The CY7C1614KV18-250BZI finds extensive application in various fields, including: - Computer systems and servers - Networking equipment - Telecommunications systems - Industrial automation - Medical devices - Automotive electronics

Alternative Models

Several alternative models with similar specifications and functionalities are available in the market. Some notable alternatives to the CY7C1614KV18-250BZI include: - MT48LC16M8A2P-75 - IS61LV25616AL-10TLI - AS7C34098A-10TIN

These alternative models can be considered based on specific requirements and availability.

In conclusion, the CY7C1614KV18-250BZI is a high-performance synchronous SRAM chip that offers fast access times, large storage capacity, and low power consumption. It finds application in various electronic systems and provides reliable data storage and retrieval capabilities.